AlN/diamond heterojunction diodes

被引：84

作者：

Miskys, CR ^{[1
]}

Garrido, JA ^{[1
]}

Nebel, CE ^{[1
]}

Hermann, M ^{[1
]}

Ambacher, O ^{[1
]}

Eickhoff, M ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 02期

关键词：

D O I：

10.1063/1.1532545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An aluminum nitride/diamond p-n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond. The epitaxial nature of this heterojunction has been confirmed by high-resolution x-ray diffraction. The silicon-doped AlN film (n-type) on the natural boron-doped (p-type) diamond substrate formed a heterobipolar diode with good rectifying properties and surprisingly efficient light emission in the spectral range from 2.7 to 4.8 eV under forward bias. Results concerning the structural, electrical, and optical characterization of the AlN/diamond heterojunction are reported in this letter. (C) 2003 American Institute of Physics.

引用

页码：290 / 292

页数：3

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