Annealing of ZrAlxOy ultrathin films on Si in a vacuum or in O2

被引:9
作者
da Rosa, EBO [1 ]
Morais, J [1 ]
Pezzi, RP [1 ]
Miotti, L [1 ]
Baumvol, IJR [1 ]
机构
[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil
关键词
D O I
10.1149/1.1414290
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
ZrAlxOy films deposited on Si were submitted to thermal annealings in a vacuum or an oxygen atmosphere. Elemental compositions as functions of depth were established using ion beam techniques such as Rutherford backscattering spectrometry and narrow nuclear resonance profiling. In addition, chemical composition profiles were obtained by angle-resolved X-ray photoelectron spectroscopy. The as-deposited film is amorphous, has an abrupt interface with the Si substrate, and its chemical composition is a double oxide with approximate stoichiometry Zr4AlO9. Atomic transport and chemical reaction induced by thermal annealing were investigated by the above mentioned techniques and by low energy ion scattering spectroscopy. We have observed that Al, O, and Si migrate during annealing, whereas Zr is essentially immobile. Oxygen from the gas phase was heavily incorporated into the oxide films during annealing in O-2, mostly in exchange for previously existing oxygen. (C) 2001 The Electrochemical Society.
引用
收藏
页码:G695 / G703
页数:9
相关论文
共 41 条
  • [21] Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation
    Houssa, M
    Afanas'ev, VV
    Stesmans, A
    Heyns, MM
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1885 - 1887
  • [22] Challenges for atomic scale modeling in alternative gate stack engineering
    Kawamoto, A
    Jameson, J
    Cho, K
    Dutton, RW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (10) : 1787 - 1794
  • [23] Alternative dielectrics to silicon dioxide for memory and logic devices
    Kingon, AI
    Maria, JP
    Streiffer, SK
    [J]. NATURE, 2000, 406 (6799) : 1032 - 1038
  • [24] Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
    Klein, TM
    Niu, D
    Epling, WS
    Li, W
    Maher, DM
    Hobbs, CC
    Hegde, RI
    Baumvol, IJR
    Parsons, GN
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (25) : 4001 - 4003
  • [25] Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si
    Krug, C
    da Rosa, EBO
    de Almeida, RMC
    Morais, J
    Baumvol, IJR
    Salgado, TDM
    Stedile, FC
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (19) : 4120 - 4123
  • [26] Comment on "Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si" -: Reply
    Krug, C
    da Rosa, EBO
    de Almeida, RMC
    Morais, J
    Baumvol, IJR
    Salgado, TDM
    Stedile, FC
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (20) : 4714 - 4714
  • [27] Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation
    Landheer, D
    Gupta, JA
    Sproule, GI
    McCaffrey, JP
    Graham, MJ
    Yang, KC
    Lu, ZH
    Lennard, WN
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (02) : G29 - G35
  • [28] LANGERON JP, 1970, NOUVEAU TRAITE CHIMI, V9, P685
  • [29] Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
    Lee, BH
    Kang, LG
    Nieh, R
    Qi, WJ
    Lee, JC
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1926 - 1928
  • [30] Ma TP, 2000, ELEC SOC S, V2000, P19