Low-temperature preparation of SrBi2Ta2O9 thin films by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition and their electrical properties

A SrBi(2)Ta(2)Og (SBT) thin Nm was prepared by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). The deposition temperature dependence of the composition of the film was lesser than that of films prepared by conventional thermal MOCVD. An almost single phase of SET was obtained at 610 degreesC. The crystallinity of this film was higher than that of the film prepared by thermal MOCVD at 500 degreesC and subsequent heat treatment at 800 degreesC. The leakage current density of this film was small, on the order of 10(-8) A/cm(2) up to 240 kV/cm. Moreover, two fold the remanent polarization and the coercive field at an applied electric field of 400kV/cm were 14.5 muC/cm(2) and 77kV/cm, respectively These values were larger than those of the film prepared by thermal MOCVD at 500 degreesC with heat treatment at 800 degreesC.