Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

被引：26

作者：

Lee, Kwang H.

Choi, Jeong-M.

Im, Seongil ^{[1
]}

Lee, Byoung H.

Im, Kyo K.

Sung, Myung M.

Lee, Seungjun

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

[3] Ewha Womans Univ, Informat Elect Engn, Seoul 120750, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 12期

关键词：

D O I：

10.1063/1.2786595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm-thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (AlOx)-self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n(+)-Si substrate. The AlOx-SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF/cm(2) on ITO glass and on n(+)-Si substrate, respectively, along with a high dielectric strength of 4 MV/cm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm(2)/V s, operating at -3 V with an on/off current ratio of similar to 10(3). Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of similar to 5. (c) 2007 American Institute of Physics.

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页数：3

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