Polymer/YOx hybrid-sandwich gate dielectrics for semitransparent pentacene thin-film transistors operating under 5 V

被引：84

作者：

Hwang, Do Kyung

Kim, Chang Su

Choi, Jeong Min

Lee, Kimoon

Park, Ji Hoon

Kim, Eugene

Baik, Hong Koo

Kim, Jae Hoon

Im, Seongil

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[3] Hongik Univ, Dept Informat Display Engn, Seoul 121791, South Korea

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 17期

关键词：

FIELD-EFFECT TRANSISTORS; LOW-VOLTAGE; ORGANIC TRANSISTORS; NIOX ELECTRODES; INSULATORS; MORPHOLOGY; CIRCUITS; DISPLAYS; CHANNEL; DRIVEN;

D O I：

10.1002/adma.200600409

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A hybrid-sandwich dielectric-combining the advantages of inorganic high-dielectric-constant dielectrics and ultrathin organic dielectrics-for the gate of pentacene thin-film transistors (TFTs, see figure) is presented. ne performance of the TFTs and resistance-load inverters constructed with them is shown to be satisfactory even when the devices are operated at the low voltage of -5 V.

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收藏

页码：2299 / +

页数：6

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