Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing

被引：77

作者：

Skorupa, W ^{[1
]}

Gebel, T

Yankov, RA

Paul, S

Lerch, W

Downey, DF

Arevalo, EA

机构：

[1] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Nanoparc GmbH, Dresden, Germany

[3] Mattson Thermal Prod GmbH, D-89160 Dornstadt, Germany

[4] Varian Semicond Equipment Associates, Gloucester, MA 01930 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 06期

关键词：

D O I：

10.1149/1.1899268

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The use of flash lamp annealing for ultrashallow junction formation in silicon has been described. Low energy boron and arsenic implants have been heat-treated in this way using peak temperatures in the range of 1100 to 1300 degrees C and effective anneal times of 20 and 3 ms. Secondary ion mass spectrometry and four-point probe measurements have been undertaken to determine the junction depth and the sheet resistance, respectively. Optimum processing conditions have been identified, under which one can obtain combinations of junction depth and sheet resistance values that meet the 90 nm technology node requirements and beyond. (c) 2005 The Electrochemical Society. All rights reserved.

引用

页码：G436 / G440

页数：5

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