Wavelength shift of gallium nitride light emitting diode with p-down structure

被引：22

作者：

Lan, WH ^{[1
]}

机构：

[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 06期

关键词：

electroluminescence (EL); light-emitting diodes (LEDs); multiple-quantum well (MQW); p-down; wavelength shift;

D O I：

10.1109/TED.2005.848114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both the p-gallium nitride (GaN) on an n-light-emitting diode (LED) structure and the n-GaN on p-LED structure were fabricated by metal-organic vapor phase epitaxy on c axis sapphire substrate. The output spectra with different applied bias voltages were studied on these structures. The small amount of the wavelength shift under a forward bias condition in the proposed p-down LED structure was observed but not in the n-down LED structure. This phenomenon was characterized by the effective electric field in the well created from the built-in electric field and the applied electric field. This proposed p-down LED shows an opportunity in the application of wavelength shift-free optoelectronic devices.

引用

页码：1217 / 1219

页数：3

共 15 条

[1] High-power and reliable operation of vertical light-emitting diodes on bulk GaN [J].

Cao, XA ;

Arthur, SD .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :3971-3973

[2] Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Song, JJ ;

Keller, S ;

Minsky, MS ;

Hu, E ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1128-1130

[3] Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Song, JJ ;

Keller, S ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (22) :3181-3183

[4] Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers [J].

Jursenas, S ;

Kurilcik, G ;

Tamulaitis, G ;

Zukauskas, A ;

Gaska, R ;

Shur, MS ;

Khan, MA ;

Yang, JW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2388-2390

[5]

KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775

[6] SCHOTTKY-BARRIER PHOTODETECTOR BASED ON MG-DOPED P-TYPE GAN FILMS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

BLASINGAME, M ;

BHATTARAI, AR .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2455-2456

[7] P-down InGaN/GaN multiple quantum wells light-emitting diode structure grown by metal-organic vapor-phase epitaxy [J].

Ko, CH ;

Su, YK ;

Chang, SJ ;

Kuan, TM ;

Chiang, CI ;

Lan, WH ;

Lin, WJ ;

Webb, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2489-2492

[8] Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates [J].

Krestnikov, IL ;

Strassburg, M ;

Strittmatter, A ;

Ledentsov, NN ;

Christen, J ;

Hoffmann, A ;

Bimberg, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB) :L1057-L1060

[9] Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures [J].

Liu, W ;

Li, MF ;

Teo, KL ;

Akutsu, N ;

Matsumoto, K .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (07) :2794-2798

[10] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

← 1 2 →