High-power and reliable operation of vertical light-emitting diodes on bulk GaN

被引：133

作者：

Cao, XA ^{[1
]}

Arthur, SD ^{[1
]}

机构：

[1] Gen Elect Global Res Ctr, Niskayuna, NY 12309 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期

关键词：

D O I：

10.1063/1.1810631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN/GaN light-emitting diodes (LEDs) with lateral and vertical geometries have been fabricated on free-standing GaN substrates. Current spreading was significantly enhanced in the vertical LED, leading to a reduced series resistance of 7 Omega compared to 12.2 and 14.2 Omega for the lateral LEDs on GaN and sapphire, respectively. As a result, the light output and power conversion efficiency of the vertical LED on GaN were greatly improved at high injection currents. The vertical LED was subjected to a stress test at 400 mA and showed minimal degradation of optical power, whereas the same stress resulted in the destruction of the lateral LED on sapphire due to increased current crowding and self-heating. However, lateral LEDs on sapphire with optimized current spreading exhibited excellent reliability, indicating the presence of a high density of dislocations (similar to10(9) cm(-2)) in the heteroepitaxial device does not accelerate LED degradation at current densities up to 700 A/cm(2). (C) 2004 American Institute of Physics.

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页码：3971 / 3973

页数：3

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