Minute SiGe quantum dots on Si(001) by a kinetic 3D island mode

被引：21

作者：

Koch, R

Wedler, G

Schulz, JJ

Wassermann, B

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.87.136104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated the initial growth stages of SixGe1-x/Si(001) by real time stress measurements and in situ scanning tunneling microscopy at deposition temperatures, where intermixing effects are still minute (less than or equal to 900 K). Whereas Ge/Si(001) is a well known Stranski-Krastanow system, the growth of SiGe alloy films switches to a 3D island mode at Si content above 20%. The obtained islands are small (a few nanometers), are uniform in shape, and exhibit a narrow size distribution, making them promising candidates for future quantum dot devices.

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页码：1 / 136104

页数：4

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