Study of deep silicon etching for micro-gyroscope fabrication

被引：30

作者：

Fu, L ^{[1
]}

Miao, JM

Li, XX

Lin, RM

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Nanyang Technol Univ, Sch Mech & Prod Engn, Singapore 639798, Singapore

来源：

APPLIED SURFACE SCIENCE | 2001年 / 177卷 / 1-2期

关键词：

etching; silicon; fabrication; RIE lag; plasma;

D O I：

10.1016/S0169-4332(01)00197-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Deep silicon etching technique can offer many advantages in microelectromechanical system (MEMS) fabrication because of its high etch rate, high aspect ratio and high anisotropic etching behavior comparing with the conventional reactive ion etching technique. In this study, the: deep reactive ion etcher produced by Surface Technology Systems Limited (STS, UK) has been used to fabricate the micro-gyroscope. The effects of feature size of the structure, platen power and process pressure on etch rate and reactive ion etching lag have been studied. Micro-gyroscope has been fabricated by using the optimum etching conditions. (C) 2001 Published by Elsevier Science B.V.

引用

页码：78 / 84

页数：7

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