SPICE model of the resonant-tunnelling diode

被引：18

作者：

Brown, ER

McMahon, OB

Mahoney, LJ

Molvar, KM

机构：

[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington, MA 02173-9108

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 10期

关键词：

resonant tunnelling devices; semiconductor diodes; SPICE;

D O I：

10.1049/el:19960576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SPICE3 model is developed for the resonant-tunnelling diode thar combines a physical formulation of the coherent current component between zero bias and the valley point with an empirical formulation-for the incoherent, or excess, current at bias voltages beyond the valley. The model is designed for type-I RTDs, such as GaAs/AlGaAs structures, and a fitting procedure is developed to derive the parameters of the model From the experimental current/voltage curve.

引用

页码：938 / 940

页数：3

共 6 条

[1] OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES [J].