Characterization of silicon-on-insulator wafers by photoluminescence decay lifetime measurement

被引:8
作者
Ibuka, S [1 ]
Tajima, M [1 ]
机构
[1] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 11B期
关键词
silicon-on-insulator; SOI; photoluminescence; lifetime; electron-hole droplet; SIMOX;
D O I
10.1143/JJAP.39.L1124
中图分类号
O59 [应用物理学];
学科分类号
摘要
The lifetime of an electron-hole droplet (EHD) generated in a superficial Si layer of a silicon-on-insulator (SOI) wafer was investigated using time-resolved photoluminescence technique. Formation of the EHD in the superficial Si layer was realized employing pulsed ultraviolet laser light as an excitation source, because of its shallow penetration depth and confinement of photo-excited carriers in the layer. Dependence of the EHD lifetime on surface condition, fabrication technique and wafer vendor was successfully observed. We demonstrated that the EHD lifetime is sensitive to crystalline quality of the superficial Si layer, and propose that the present method has great potential for characterization of SOI wafers.
引用
收藏
页码:L1124 / L1126
页数:3
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