Origin of enormous photon-induced volume expansion of GeO2-SiO2 thin glass films

被引：9

作者：

Nishii, J

Yamanaka, H

Hosono, H

Kawazoe, H

机构：

[1] Govt Ind Res Inst, AIST, Dept Opt Mat, Ikeda, Osaka 563, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 141卷 / 1-4期

关键词：

laser irradiation; photosensitivity; GeO2-SiO2; glass;

D O I：

10.1016/S0168-583X(98)00167-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Large positive volume change was induced in GeO2-SiO2 thin glass films by irradiation with ArF excimer laser pulses. The photo-sensitivity of the thin film increased with the GeO2 content. The concentration of GeO2 in the irradiated portion decreased by irradiation. Enhanced etching rate of the irradiated area implies that the thin glass film is changed into a porous structure. Infrared absorption revealed that the bond angle between Si-O-Si is increased by 1.1 degrees by irradiation. These results suggest that the selective vaporization of Ge components is one of the origins of the enormous photon-induced volume expansion. (C) 1998 Elsevier Science B.V. All rights reserved.

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页码：625 / 628

页数：4

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