Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond

被引：197

作者：

Ushizawa, K ^{[1
]}

Watanabe, K ^{[1
]}

Ando, T ^{[1
]}

Sakaguchi, I ^{[1
]}

Nishitani-Gamo, M ^{[1
]}

Sato, Y ^{[1
]}

Kanda, H ^{[1
]}

机构：

[1] Natl Inst Res Inorgan Mat, Japan Sci & Technol Corp, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3050044, Japan

来源：

DIAMOND AND RELATED MATERIALS | 1998年 / 7卷 / 11-12期

关键词：

boron doping; diamond individual crystal; Raman microscopy; MPCVD;

D O I：

10.1016/S0925-9635(98)00296-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated Raman spectra of {100} and {111} facets of B-doped diamond crystals grown by microwave plasma assisted chemical vapor deposition as a function of boron concentration. We have used individual crystals rather than films to avoid stresses which can cause shifts and broadening of the Raman line. A small amount of diborane improves the crystal quality of deposited diamond with changing the Raman spectral features. The asymmetry and broadening of the one-phonon are due to Fano interference, and broad bands centered ca 500 and 1230 cm(-1) appear. (C) 1998 Elsevier Science S.A. All rights reserved.

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页码：1719 / 1722

页数：4

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