Fabrication of two-dimensional photonic lattices in GaAs: The regular graphite structures

被引:16
作者
Chen, Y [1 ]
Faini, G [1 ]
Launois, H [1 ]
Etrillard, J [1 ]
机构
[1] CNET,FRANCE TELECOM,BAGNEUX LAB,F-92225 BAGNEUX,FRANCE
关键词
photonic band gaps; nanofabrication;
D O I
10.1006/spmi.1996.0315
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Two-dimensional photonic lattices have been fabricated in GaAs by using standard electron beam lithography and reactive ion etching techniques. In order to obtain absolute photonic band gaps at near-infrared frequencies, graphite structures which consist of parallel cylindrical rods of GaAs at the vertices of regular hexagons have been studied. Typically, for quarter micron diameter rods and half micron nearest spacing, an etching depth of more than one micron was obtained. Preliminary results from optical characterization are also presented. (C) 1997 Academic Press Limited.
引用
收藏
页码:109 / 113
页数:5
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