Study on pHpzc and surface potential of tin oxide gate ISFET

被引:55
作者
Liao, HK
Chia, LL
Chou, JC
Chung, WY
Sun, TP
Hsiung, SK [1 ]
机构
[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 320, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu, Yunlin, Taiwan
[3] Chung Yu Jr Coll Business & Adm, Dept Management Informat Syst, Chilung 201, Taiwan
关键词
pH(pzc); surface potential; tin oxide; ISFET; pH response;
D O I
10.1016/S0254-0584(99)00033-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, capacitance-voltage (C-V) and current-voltage (I-V) measurements were used to investigate pH(pzc) (point zero of charge) and surface potential of a tin oxide gate ISFET. Dual FETs configuration: AlSnO2/Si3N4/SiO2 gate MOSFET and SnO2/Si3N4/SiO2 gate ISFET were fabricated for this study. Experimental results show that different operations of ISFETs will yield different values of the pH(pzc) and surface potential. For example, the pH(pzc) is 5.6 for the ISFET's operation at the flat band condition and the pH(pzc) is 6 for the ISFET's operation at the linear region. This phenomenon can be explained by the influence of charge density at the semiconductor-insulator interface. Additionally, according to a series of theoretical simulations, we can conclude that the surface parameter Delta pK is the dominated factor of pH response in ISFET. Experimental results and theoretical simulations can achieve a good curve fitting when appropriate surface parameters for tin oxide are chosen. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:6 / 11
页数:6
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