Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions

被引：50

作者：

Huh, C ^{[1
]}

Schaff, WJ

Eastman, LF

Park, SJ

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Nanophoton Semicond Lab, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 02期

关键词：

in fluctuation; InGaN/GaN multiple-quantum-well (MQW); light-emitting diode (LED); output power; temperature coefficient;

D O I：

10.1109/LED.2003.822659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of performance of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different indium compositions in the MQWs was investigated. With increasing In composition in the MQWs, the optical performance of the LEDs at room temperature was increased due to an increase in the localized energy states caused by In composition fluctuations in MQWs. As the temperature was increased, however, the decrease in output power for LED with a higher In composition in the MQWs was higher than that of LED with a lower In composition in the MQWs. This could be due to the increased nonradiation recombination through the high defect densities in the MQWs resulted from the increased accumulation of strain between InGaN well and GaN barrier.

引用

页码：61 / 63

页数：3

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