AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress

被引：55

作者：

Osinski, M ^{[1
]}

Zeller, J ^{[1
]}

Chiu, PC ^{[1
]}

Phillips, BS ^{[1
]}

Barton, DL ^{[1
]}

机构：

[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.116936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study focused on the performance of commercial AlGaN/InGaN/GaN blue light emitting diodes (LEDs) under high current pulse conditions. The results of deep level transient spectroscopy (DLTS), thermally stimulated capacitance, and admittance spectroscopy measurements performed on stressed devices, showed no evidence of any deep-level defects that may have developed as a result of high current pulses. Physical analysis of stressed LEDs indicated a strong connection between the high intrinsic defect density in these devices and the resulting mode of degradation. (C) 1996 American Institute of Physics.

引用

页码：898 / 900

页数：3

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