Self-assembly of one-dimensional nanostructures at silicon surfaces

被引：74

作者：

Himpsel, FJ ^{[1
]}

Kirakosian, A ^{[1
]}

Crain, JN ^{[1
]}

Lin, JL ^{[1
]}

Petrovykh, DY ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 117卷 / 03期

基金：

美国国家科学基金会;

关键词：

nanostructures; quantum wells; surfaces and interfaces; nanofabrications; scanning tunnelling microscopy;

D O I：

10.1016/S0038-1098(00)00441-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Nanostructures at surfaces and interfaces are a fertile testing ground for bringing the idea of 'tailored solids' towards reality. Electronic properties can be controlled systematically by confinement or by interface effects. The presence of a single crystal substrate allows for the self-assembly of highly regular nanoobjects, such as stripes and strings of dots with sizes of about 10 nm. Using silicon as substrate facilitates the electronic integration of nanodevices into micro-electronics. We speculate how such structures might evolve into future devices, such as data storage arrays with densities of Terabits/cm(2) and self-assembled, highly parallel data processors for pattern recognition. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：149 / 157

页数：9

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