Regular step arrays on silicon

被引：136

作者：

Viernow, J

Lin, JL

Petrovykh, DY

Leibsle, FM

Men, FK

Himpsel, FJ

机构：

[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[2] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[3] Univ Missouri, Dept Phys, Kansas City, MO 64110 USA

[4] Natl Chung Cheng Univ, Dept Phys, Chiayi, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.120882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly regular arrays of steps are produced on vicinal Si(111)7x7. The step edges are atomically straight for up to 2x10(4) lattice sites. The terraces are single domain, which produces a minimum kink width of 2.3 nm (half a 7x7 unit cell) and thus a high barrier for creating kinks. Criteria for obtaining optimum step arrays are established, such as the miscut [approximate to 1 degrees towards (<(11)over bar>2)] and an annealing sequence which passes through step bunching regions quickly. (C) 1998 American Institute of Physics.

引用

页码：948 / 950

页数：3

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