MONOHYDRIDE STRUCTURES ON CHEMICALLY PREPARED SILICON SURFACES

被引：50

作者：

JAKOB, P ^{[1
]}

CHABAL, YJ ^{[1
]}

KUHNKE, K ^{[1
]}

CHRISTMAN, SB ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

SURFACE SCIENCE | 1994年 / 302卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)91095-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemically prepared, H-terminated silicon surfaces have been characterized by measuring their Si-H stretch infrared absorption spectra. This study focuses on two monohydride-terminated step structures present on stepped infrared absorption spectra. This study focuses on two monohydride-terminated step structures present on stepped Si(111) surfaces with a (112) misorientation: the Si(111)9 degrees[112] and the Si(110) surfaces. Analysis of the position and polarization of the observed vibrational bands shows that chemical etching promotes the formation of long rows of monohydride-terminated steps, with poor long range order in the direction perpendicular to the step edges. In particular, the chemically prepared H/Si(110) surfaces are atomically rough in one dimension while exhibiting atomically straight steps in the other.

引用

收藏

页码：49 / 56

页数：8

相关论文

共 24 条

[1] INVERSE-PHOTOEMISSION SPECTROSCOPY OF THE UNRECONSTRUCTED, IDEALLY H-TERMINATED SI(111) SURFACE [J].

BOUZIDI, S ;

COLETTI, F ;

DEBEVER, JM ;

THIRY, PA ;

DUMAS, P ;

CHABAL, YJ .

PHYSICAL REVIEW B, 1992, 45 (03) :1187-1192

[2] ELECTRON-ENERGY-LOSS CHARACTERIZATION OF THE H-TERMINATED SI(111) AND SI(100) SURFACES OBTAINED BY ETCHING IN NH4F [J].

DUMAS, P ;

CHABAL, YJ .

CHEMICAL PHYSICS LETTERS, 1991, 181 (06) :537-543

[3] COUPLING OF AN ADSORBATE VIBRATION TO A SUBSTRATE SURFACE PHONON - H ON SI(111) [J].

DUMAS, P ;

CHABAL, YJ ;

HIGASHI, GS .

PHYSICAL REVIEW LETTERS, 1990, 65 (09) :1124-1127

[4] VIBRATIONAL PROPERTIES OF H/SI(111)-(1X1) SURFACES - INFRARED-ABSORPTION AND ELECTRON-ENERGY LOSS SPECTROSCOPIC STUDIES [J].

DUMAS, P ;

CHABAL, YJ ;

JAKOB, P .

APPLIED SURFACE SCIENCE, 1993, 65-6 (1-4) :580-586

[5] 2-PHONON BOUND-STATE FOR THE HYDROGEN VIBRATION ON THE H/SI(111) SURFACE [J].

GUYOTSIONNEST, P .

PHYSICAL REVIEW LETTERS, 1991, 67 (17) :2323-2326

[6] COHERENT PROCESSES AT SURFACES - FREE-INDUCTION DECAY AND PHOTON-ECHO OF THE SI-H STRETCHING VIBRATION FOR H/SI(111) [J].

GUYOTSIONNEST, P .

PHYSICAL REVIEW LETTERS, 1991, 66 (11) :1489-1492

[7] LIFETIME OF AN ADSORBATE-SUBSTRATE VIBRATION - H ON SI(111) [J].

GUYOTSIONNEST, P ;

DUMAS, P ;

CHABAL, YJ ;

HIGASHI, GS .

PHYSICAL REVIEW LETTERS, 1990, 64 (18) :2156-2159

[8] STEP-FLOW MECHANISM VERSUS PIT CORROSION - SCANNING-TUNNELING MICROSCOPY OBSERVATIONS ON WET ETCHING OF SI(111) BY HF SOLUTIONS [J].

HESSEL, HE ;

FELTZ, A ;

REITER, M ;

MEMMERT, U ;

BEHM, RJ .

CHEMICAL PHYSICS LETTERS, 1991, 186 (2-3) :275-280

[9] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658

[10] IDEAL HYDROGEN TERMINATION OF THE SI-(111) SURFACE [J].

HIGASHI, GS ;

CHABAL, YJ ;

TRUCKS, GW ;

RAGHAVACHARI, K .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :656-658