Low-Voltage, Simple-Structure, High-Efficiency p-i-n-Type Electrophosphorescent Blue Organic Light-Emitting Diodes

被引：5

作者：

Yu, Jae Hyung ^{[1
]}

Jeon, Woo Sik ^{[1
]}

Park, Jung Soo ^{[1
]}

Pode, Ramchandra ^{[2
]}

Kwon, Jang Hyuk ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 10期

关键词：

PHOSPHORESCENT OLEDS; ELECTROLUMINESCENT DEVICES; TRANSPORT MATERIALS; EMISSION; LAYERS;

D O I：

10.1143/JJAP.49.102102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present simple p-i-n structures with single-emitting and mixed emitting layers for highly efficient phosphorescent blue organic devices. Using a high-triplet-energy-hole-transporting material of 1,1-bis(4-methylphenyl)-aminophenyl-cyclohexane (TAPC) and a high-triplet-energy-electron-transporting material of 1,3,5-tris(m-pyrid-3-ylphenyl) benzene (Tm3PyPB), the p-i-n structure has been realized by doping with MoO3 as a p-dopant and Cs2CO3 as an n-dopant. A very low onset voltage of 3.0 V and a driving voltage of 4.0 V to obtain a brightness of 1000 cd/m(2) are achieved in this p-i-n device configuration. A maximum external quantum efficiency of 23.9% and a power efficiency of 36.7 lm/W are reported. (C) 2010 The Japan Society of Applied Physics

引用

页码：1021021 / 1021024

页数：4

共 24 条

[1] High-efficiency organic electrophosphorescent devices with tris(2-phenylpyridine)iridium doped into electron-transporting materials [J].

Adachi, C ;

Baldo, MA ;

Forrest, SR ;

Thompson, ME .

APPLIED PHYSICS LETTERS, 2000, 77 (06) :904-906

[2] Highly efficient phosphorescent emission from organic electroluminescent devices [J].

Baldo, MA ;

O'Brien, DF ;

You, Y ;

Shoustikov, A ;

Sibley, S ;

Thompson, ME ;

Forrest, SR .

NATURE, 1998, 395 (6698) :151-154

[3] High efficiency blue phosphorescent organic light-emitting device [J].

Chopra, Neetu ;

Lee, Jaewon ;

Zheng, Ying ;

Eom, Sang-Hyun ;

Xue, Jiangeng ;

So, Franky .

APPLIED PHYSICS LETTERS, 2008, 93 (14)

[4] Operational stability of electrophosphorescent devices containing p and n doped transport layers [J].

D'Andrade, BW ;

Forrest, SR ;

Chwang, AB .

APPLIED PHYSICS LETTERS, 2003, 83 (19) :3858-3860

[5]

DANDRADE BW, 2008, P IMID08, P1109

[6] Effect of electron injection and transport materials on efficiency of deep-blue phosphorescent organic light-emitting devices [J].

Eom, Sang-Hyun ;

Zheng, Ying ;

Wrzesniewski, Edward ;

Lee, Jaewon ;

Chopra, Neetu ;

So, Franky ;

Xue, Jiangeng .

ORGANIC ELECTRONICS, 2009, 10 (04) :686-691

[7] High-efficiency organic electroluminescent devices using iridium complex emitter and arylamine-containing polymer buffer layer [J].

Fukase, A ;

Dao, KLT ;

Kido, J .

POLYMERS FOR ADVANCED TECHNOLOGIES, 2002, 13 (08) :601-604

[8] Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a p-i-n junction [J].

He, GF ;

Schneider, O ;

Qin, DS ;

Zhou, X ;

Pfeiffer, M ;

Leo, K .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5773-5777

[9] High-efficiency and low-voltage p-i-n electrophosphorescent organic light-emitting diodes with double-emission layers [J].

He, GF ;

Pfeiffer, M ;

Leo, K ;

Hofmann, M ;

Birnstock, J ;

Pudzich, R ;

Salbeck, J .

APPLIED PHYSICS LETTERS, 2004, 85 (17) :3911-3913

[10] Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure [J].

Huang, JS ;

Blochwitz-Nimoth, J ;

Pfeiffer, M ;

Leo, K .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :838-844

← 1 2 3 →