Growth of C60 single crystal films on metal substrates

被引：5

作者：

Hou, JG ^{[1
]}

Zeng, JL

Li, YQ

Wu, ZQ

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, Ctr Fundamental Phys, Hefei 230026, Anhui, Peoples R China

来源：

THIN SOLID FILMS | 1998年 / 320卷 / 02期

基金：

中国国家自然科学基金;

关键词：

fullerene; film growth; structure and morphology of film; deposition process; growth mechanism; metals; X-ray diffraction;

D O I：

10.1016/S0040-6090(97)00469-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality C-60(111) single crystal films have been grown on Ni3Fe(111), Ni3Co(111) and Ni3Fe(110) surfaces using hot-wall diffusion method. X-ray diffraction results show that well-ordered films can be obtained near 150 degrees C on these substrates. The high quality of the films could be attributed to the perfect lattice match between C-60 film and substrates, low growth rate of C-60, and the suitable substrate temperature. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：179 / 183

页数：5

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