Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

被引：39

作者：

Chang, KM ^{[1
]}

Yang, WC

Tsai, CP

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 08期

关键词：

N2O-plasma oxynitride; stack oxide; thin film transistors (TFTs);

D O I：

10.1109/LED.2003.815155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This investigation is the first to demonstrate a novel tetraethylorthosilicate. (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed, of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by. PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide UPS TFTs is over 4 times than that of traditional TEOS oxide UPS TFTs. these. improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si drop N bonds, as well as to reduce the trap density in the dxynitride/poly-Si interface.

引用

页码：512 / 514

页数：3

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