Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

被引：51

作者：

Dheeraj, D. L. ^{[1
]}

Patriarche, G. ^{[2
]}

Largeau, L. ^{[2
]}

Zhou, H. L. ^{[1
]}

van Helvoort, A. T. J. ^{[3
]}

Glas, F. ^{[2
]}

Harmand, J. C. ^{[2
]}

Fimland, B. O. ^{[1
]}

Weman, H. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect Telecommun, NO-7491 Trondheim, Norway

[2] Route Nozay, LPN, CNRS, F-91460 Marcoussis, France

[3] Norwegian Univ Sci & Technol, Dept Phys, NO-7491 Trondheim, Norway

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 27期

关键词：

D O I：

10.1088/0957-4484/19/27/275605

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the growth of GaAsSb nanowires (NWs) on GaAs(111) B substrates by Au-assisted molecular beam epitaxy. The structural characteristics of the GaAsSb NWs have been investigated in detail. Their Sb mole fraction was found to be about 25%. Their crystal structure was found to be pure zinc blende (ZB), in contrast to the wurtzite structure observed in GaAs NWs grown under similar conditions. The ZB GaAsSb NWs exhibit rotational twins around their [111] B growth axis, with twin-free segments as long as 500 nm. The total volumes of GaAsSb segments with twinned and un-twinned orientations, respectively, were found to be equal by x-ray diffraction analysis of NW ensembles.

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