A high-power and high-efficiency monolithic power amplifier at 28 GHz for LMDS applications

被引：32

作者：

Siddiqui, MK ^{[1
]}

Sharma, AK ^{[1
]}

Callejo, LG ^{[1
]}

Lai, R ^{[1
]}

机构：

[1] TRW Space & Elect Grp, Elect Technol Div, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 12期

关键词：

millimeter-wave transmitters; MMIC power amplifiers; MMIC transmitters;

D O I：

10.1109/22.739201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-power and high-efficiency monolithic power amplifier operating from 27.5 to 29.5 GHz is presented for local multipoint distribution service. Using 0.15-mu m InGaAs/AlGaAs/GaAs pseudomorphic high electron-mobility transistor devices, the two-stage power amplifier on 4-mil GaAs substrate demonstrated greater than 16-dB small-signal gain, 32-dBm (1.6 W) power with 35% power-added efficiency, The amplifier attained peak output power of 33.9 dBm (2.4 W) and peak power-added efficiency of 37%. At the peak power level, the amplifier exhibited power densities in excess of 640 mW/mm, which is the highest output power density attained by Ka-band monolithic power amplifiers, At lower drain voltage, the amplifier attained 43% power-added efficiency with 30-dBm output power.

引用

页码：2226 / 2232

页数：7

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