TEM investigation of the dependence of structural defects on prelayer formation in GaAs-on-Si thin films

被引：6

作者：

Lioutas, CB ^{[1
]}

Delimitisi, A

Georgakilas, A

机构：

[1] Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece

[2] IESL, FORTH, GR-71110 Heraklion, Greece

[3] Univ Crete, Dept Phys, Microelect Res Grp, GR-71110 Heraklion, Greece

来源：

THIN SOLID FILMS | 1998年 / 336卷 / 1-2期

关键词：

transmission electron microscopy; molecular beam epitaxy; structural properties; optoelectronic devices;

D O I：

10.1016/S0040-6090(98)01217-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a transmission electron microscopy (TEM) study of the dependence of structure defects on the kind (Ga or As) and the growth temperature of the prelayer in GaAs-on-Si films grown by molecular beam epitaxy (MBE) on vicinal (100) Si substrates. Generally the prelayer formation conditions do not change the appearance and the density of threading dislocations that remain the main structural defect. However the structural characteristics for each cut-off angle appear to depend eventually on the [011] direction of GaAs epilayer relatively to the [011] misoriented Si substrate direction. Planar defects can be avoided only for midrange angles (e.g. 4.5 degrees) using As prelayer at 400 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：96 / 99

页数：4

共 8 条

[1] ATOMIC-STEP REARRANGEMENT ON SI(100) BY INTERACTION WITH ARSENIC AND THE IMPLICATION FOR GAAS-ON-SI EPITAXY [J].

BRINGANS, RD ;

BIEGELSEN, DK ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1991, 44 (07) :3054-3063

[2] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[3] ACHIEVEMENTS AND LIMITATIONS IN OPTIMIZED GAAS FILMS GROWN ON SI BY MOLECULAR-BEAM EPITAXY [J].

GEORGAKILAS, A ;

PANAYOTATOS, P ;

STOEMENOS, J ;

MOURRAIN, JL ;

CHRISTOU, A .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) :2679-2701

[4] Effects of Si(100) tilting angle and prelayer conditions on GaAs/Si heterostructures [J].

Georgakilas, A ;

Papavassiliou, C ;

Constantinidis, G ;

Tsagaraki, K ;

Krasny, H ;

Lochtermann, E ;

Panayotatos, P .

APPLIED SURFACE SCIENCE, 1996, 102 :67-72

[5]

GEORGAKILAS A, 1993, J MATER RES, V8, P8

[6] THEORETICAL MODELING OF HETEROEPITAXIAL GROWTH INITIATION [J].

KAXIRAS, E ;

ALERHAND, OL ;

WANG, J ;

JOANNOPOULOS, JD .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 14 (03) :245-253

[7] Investigation of Si-substrate preparation for GaAs-on-Si MBE growth [J].

Kayambaki, M ;

Callec, R ;

Constantinidis, G ;

Papavassiliou, C ;

Lochtermann, E ;

Krasny, H ;

Papadakis, N ;

Panayotatos, P ;

Georgakilas, A .

JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) :300-303

[8]

WEI XL, 1994, APPL PHYS LETT, V65, P10

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