Photoluminescence of thin amorphous-nanocrystalline silicon films

被引:13
作者
Golubev, VG [1 ]
Medvedev, AV [1 ]
Pevtsov, AB [1 ]
Sel'kin, AV [1 ]
Feoktistov, NA [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1134/1.1130744
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Photoluminescence spectra of thin hydrogenated-silicon films having mixed amorphous-nanocrystalline phase composition have been studied. Fabry-Perot interference was found to affect strongly the shape of the spectra. An analysis of the spectra made with inclusion of interference corrections shows that only one emission band forms in the 0.6-1.0 mu m region due to carrier recombination at centers of the same type. (C) 1999 American Institute of Physics. [S1063-7834(99)03201-3].
引用
收藏
页码:137 / 142
页数:6
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