Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate

被引：19

作者：

Buljan, M. ^{[1
]}

Grenzer, J. ^{[2
]}

Holy, V. ^{[3
]}

Radic, N. ^{[1
]}

Misic-Radic, T. ^{[1
]}

Levichev, S. ^{[4
]}

Bernstorff, S. ^{[5
]}

Pivac, B. ^{[1
]}

Capan, I. ^{[1
]}

机构：

[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[2] Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany

[3] Charles Univ Prague, Prague 12116, Czech Republic

[4] Univ Minho, P-4710057 Braga, Portugal

[5] Sincrotrone Trieste, I-34012 Basovizza, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 16期

关键词：

SILICON NANOCRYSTALS;

D O I：

10.1063/1.3504249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on structural properties and charge trapping in [(Ge+SiO2)/SiO2]x2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si-SiO2 interface trapping is dominant for the vacuum annealed films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3504249]

引用

页数：3

共 16 条

[1] Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix [J].