Growth of spatially ordered Ge nanoclusters in an amorphous matrix on rippled substrates

被引：11

作者：

Buljan, M. ^{[1
,2
]}

Grenzer, J. ^{[3
]}

Keller, A. ^{[3
]}

Radic, N. ^{[1
]}

Vales, V. ^{[2
]}

Bernstorff, S. ^{[4
]}

Cornelius, T. ^{[5
]}

Metzger, H. T. ^{[5
]}

Holy, V. ^{[2
]}

机构：

[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[2] Charles Univ Prague, Prague 12116, Czech Republic

[3] Forschungszentrum Dresden Rossendorf eV, D-01314 Dresden, Germany

[4] Sincrotrone Trieste, I-34102 Basovizza, Italy

[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 12期

关键词：

QUANTUM-DOT CRYSTALS; GERMANIUM NANOCRYSTALS; NANOSTRUCTURES; SIO2;

D O I：

10.1103/PhysRevB.82.125316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

So far, the growth of spatially ordered nanoclusters by multilayer deposition has been reported and explained satisfactorily only in crystalline materials. Here we demonstrate a method for the growth of spatially ordered nanoclusters in amorphous matrices, where the ordering is achieved in the single large domain. The regular ordering is induced by the deposition of a multilayer on a periodically rippled substrate at an elevated substrate temperature. During the deposition, the nanoclusters self-arrange, following the morphology of the substrate.

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页数：5

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