Raman spectroscopy on etched graphene nanoribbons

被引：58

作者：

Bischoff, D. ^{[1
]}

Guettinger, J. ^{[1
]}

Droescher, S. ^{[1
]}

Ihn, T. ^{[1
]}

Ensslin, K. ^{[1
]}

Stampfer, C. ^{[1
,2
,3
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany

[3] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 07期

关键词：

PHONON;

D O I：

10.1063/1.3561838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G-and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D-to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3561838]

引用

页数：4

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