Localized charge injection in SiO2 films containing silicon nanocrystals

被引：57

作者：

Boer, EA ^{[1
]}

Brongersma, ML

Atwater, HA

Flagan, RC

Bell, LD

机构：

[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

[2] CALTECH, Dept Chem Engn, Pasadena, CA 91125 USA

[3] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.1383574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An atomic-force microscope (AFM) is used to locally inject, detect, and quantify the amount and location of charge in SiO2 films containing Si nanocrystals (size similar to2-6 nm). By comparison with control samples, charge trapping is shown to be due to nanocrystals and not ion-implantation-induced defects in samples containing ion-beam-synthesized Si nanocrystals. Using an electrostatic model and AFM images of charge we have estimated the amount of charge injected in a typical experiment to be a few hundred electrons and the discharge rate to be similar to 35 +/- 15 e/min. (C) 2001 American Institute of Physics.

引用

页码：791 / 793

页数：3

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