Ferroelectric thin films for integrated passive components

被引：14

作者：

Klee, M ^{[1
]}

Mackens, U ^{[1
]}

Kiewitt, R ^{[1
]}

Greuel, G ^{[1
]}

Metzmacher, C ^{[1
]}

机构：

[1] Philips GmbH, Forschungslab, Aachen, Germany

来源：

PHILIPS JOURNAL OF RESEARCH | 1998年 / 51卷 / 03期

关键词：

D O I：

10.1016/S0165-5817(98)00016-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Miniaturisation and integration of passive components play an important role in today's components market. It can be achieved by applying thin-film technologies for capacitors, resistors and inductors; high component densities have been realised with 'Passive Only Networks'. The dielectric materials used for integrated thin-film capacitors ranging from Si3N4, Ta2O5, TiO2 to earth alkaline as well as lead perovskite layers are reviewed. The capacitor performances including temperature stability, insulation resistance, breakdown fields and endurance are discussed as a function of material composition.

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收藏

页码：363 / 387

页数：25

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