Electrodeposition of Indium on Copper for CIS and CIGS Solar Cell Applications

被引：36

作者：

Huang, Q. ^{[1
]}

Reuter, K. ^{[1
]}

Amhed, S. ^{[1
]}

Deligianni, L. ^{[1
]}

Romankiw, L. T. ^{[1
]}

Jaime, S. ^{[2
]}

Grand, P. -P. ^{[2
]}

Charrier, V. ^{[2
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] NEXCIS, F-13790 Rousset, France

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 02期

关键词：

ELECTROCHEMICAL KINETICS; THIN-FILMS; SULFATE; SULFURIZATION; DEPOSITION; PRECURSORS; SYSTEM;

D O I：

10.1149/1.3518440

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrodeposition of indium on copper substrates is studied in an acid sulfate solution for applications in CuInS2 (CIS) and Cu(InGa)Se-2 (CIGS) solar cells. The study is focused on the film morphology and thickness uniformity on the nanometer scale. A two-step film growth behavior was observed, a conformal smooth film growth followed by a three-dimensional island growth. A hypothesis involving the Cu-In alloy formation and the Cu-In interdiffusion is proposed. While the room temperature alloy formation promotes the conformal deposition of a few monolayers of alloy, the fast interdiffusion between Cu and In further extends this alloy formation to a thicker layer and delays the typical island formation-growth phenomenon. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3518440] All rights reserved.

引用

页码：D57 / D61

页数：5

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