A constructive combination of antireflection and intermediate-reflector layers for a-Si/μc-Si thin film solar cells

被引：62

作者：

Das, Chandan ^{[1
]}

Lambertz, Andreas ^{[1
]}

Huepkes, Juergen ^{[1
]}

Reetz, Wilfried ^{[1
]}

Finger, Friedhelm ^{[1
]}

机构：

[1] Forschungszentrum Julich, IEF5 Photovoltaik, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.2841824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This device design approach combines sputter-deposited TiO2 antireflection layer (ARL) and plasma-enhanced chemical vapor deposition-grown SiOx intermediate-reflector layer (IRL) in superstrate a-Si/mu c-Si thin film solar cell. The loss of current from either the component cells with individual application of ARL and IRL has been recovered with their combined application. With both ARL and IRL in a-Si/mu c-Si cell, (a) the top cell current and (b) the sum of top and bottom cell current increases. An initial efficiency of 11.8% [V-oc=1.42 V, FF=0.74, J(sc) (top)=11.5 mA cm(-2), J(sc) (bottom)=11.2 mA cm(-2)] is achieved from such an a-Si/mu c-Si cell with a total Si layer thickness less than 2 mu m. (c) 2008 American Institute of Physics.

引用

页数：3

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