Morphological characterization and strain release of GaAs/InAs(001) heterostructures

被引：5

作者：

Attolini, G

Chimenti, E

Franzosi, P

Gennari, S

Pelosi, C

Lottici, PP

机构：

[1] CNR, IST MASPEC, I-43100 PARMA, ITALY

[2] UNIV PARMA, INFM, DIPARTIMENTO FIS, I-43100 PARMA, ITALY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.117094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface morphology of GaAs layers on (001) InAs substrates, grown by MOVPE at temperatures in the range 500-650 degrees C and for times from a few seconds to minutes, has been observed by atomic force microscopy. Information on the strain release and on the surface quality has been obtained by Raman scattering and high resolution x-ray diffraction measurements. Large islands with different shapes and facets are generally formed and only at 550 degrees C is a quasi-2D growth observed. At the highest growth temperatures InxGa1-xAs is detected at the interface. (C) 1996 American Institute of Physics.

引用

页码：957 / 959

页数：3

共 8 条

[1]

ANASTASSAKIS E, 1991, NATO ADV SCI I B-PHY, V273, P173

[2] RAMAN-SCATTERING STUDY OF RESIDUAL STRAIN IN GAAS/INP HETEROSTRUCTURES [J].