METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF GAAS/INP HETEROSTRUCTURES

被引：12

作者：

ATTOLINI, G

FRANZOSI, P

PELOSI, C

LAZZARINI, L

SALVIATI, G

机构：

[1] CNR-MASPEC Institute, Parma, 43100

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期

关键词：

GAAS/INP HETEROSTRUCTURE; HIGH RESOLUTION X-RAY DIFFRACTOMETRY (HRXRD); METALORGANIC VAPOR PHASE EPITAXY (MOVPE); TRANSMISSION ELECTRON MICROSCOPY (TEM);

D O I：

10.1007/BF02655262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly mismatched GaAs epitaxial layers with thickness ranging from 15 nm to 7 mum have been grown on InP substrates by atomospheric pressure metalorganic vapor phase epitaxy. Layers thinner than 30 nm exhibited 3-D growth mechanism; in the thicker layers, the islands coalesced and then the growth followed the layer by layer mechanism. The elastic strain and the extended defects have been studied by high resolution x-ray diffraction and transmission electron microscopy, respectively. The common observation of planar defects, misfit, and threading dislocations in the layers has been confirmed. The results on the elastic strain release have been discussed on the basis of the equilibrium theory.

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页码：153 / 158

页数：6

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