FORMATION OF PLANAR DEFECTS IN THE EPITAXIAL-GROWTH OF GAP ON SI SUBSTRATE BY METAL ORGANIC CHEMICAL-VAPOR DEPOSITION

被引：73

作者：

ERNST, F

PIROUZ, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4526 / 4530

页数：5

共 22 条

[1]

ALEXANDER H, 1972, ANN REV MATER SCI, V2, P8521

[2]

ALJASSIM MM, 1986, MATER RES SOC S P, V62, P49

[3] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].

BIEGELSEN, DK ;

PONCE, FA ;

SMITH, AJ ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[4]

BLAKESLEE E, 1987, MATER RES SOC S P, V91, P105

[5] ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

APPLIED PHYSICS LETTERS, 1963, 3 (09) :158-160

[6]

CHOREY CM, 1986, SEMICONDUCTOR BASED, P115

[7] DIRECT OBSERVATION OF DISLOCATIONS DUE TO EPITAXY [J].

DELAVIGNETTE, P ;

TOURNIER, J ;

AMELINCKX, S .

PHILOSOPHICAL MAGAZINE, 1961, 6 (71) :1419-&

[8] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].

FINCH, RH ;

QUEISSER, HJ ;

WASHBURN, J ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&

[9] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216

[10] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J].

HULL, R ;

FISCHERCOLBRIE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :851-853

← 1 2 3 →