LATTICE-MISMATCH-GENERATED DISLOCATION-STRUCTURES AND THEIR CONFINEMENT USING SUPERLATTICES IN HETEROEPITAXIAL GAAS/INP AND INP/GAAS GROWN BY CHEMICAL BEAM EPITAXY

被引:50
作者
CHU, SNG
TSANG, WT
CHIU, TH
MACRANDER, AT
机构
关键词
D O I
10.1063/1.343568
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:520 / 530
页数:11
相关论文
共 26 条
[1]   GAAS-MESFETS FABRICATED ON INP SUBSTRATES [J].
ASANO, K ;
KASAHARA, K ;
ITOH, T .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :289-290
[2]  
BHAT R, 1988, C GAAS RELATED COMPO
[3]   GAAS/GA0.47IN0.53AS LATTICE-MISMATCHED SCHOTTKY-BARRIER GATES - INFLUENCE OF MISFIT DISLOCATIONS ON REVERSE LEAKAGE CURRENTS [J].
CHEN, CY ;
CHU, SNG ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1985, 46 (12) :1145-1147
[4]   DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J].
CHU, SNG ;
NAKAHARA, S ;
KARLICEK, RF ;
STREGE, KE ;
MITCHAM, D ;
JOHNSTON, WD .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3441-3447
[5]  
CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[6]   MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].
CHU, SNG ;
MACRANDER, AT ;
STREGE, KE ;
JOHNSTON, WD .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :249-257
[7]  
CHU SNG, 1986, J APPL PHYS, V60, P1238
[8]   INGAAS PIN PHOTODIODES GROWN ON GAAS SUBSTRATES BY METAL ORGANIC VAPOR-PHASE EPITAXY [J].
DENTAI, AG ;
CAMPBELL, JC ;
JOYNER, CH ;
QUA, GJ .
ELECTRONICS LETTERS, 1987, 23 (01) :38-39
[9]   MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES [J].
DENTAI, AG ;
JOYNER, CH ;
TELL, B ;
ZYSKIND, JL ;
SULHOFF, JW ;
FERGUSON, JF ;
CENTANNI, JC ;
CHU, SNG ;
CHENG, CL .
ELECTRONICS LETTERS, 1986, 22 (22) :1186-1188
[10]   NATURE OF MISFIT DISLOCATION SOURCES IN STRAINED-LAYER SEMICONDUCTOR STRUCTURES [J].
DODSON, BW .
APPLIED PHYSICS LETTERS, 1988, 53 (05) :394-396