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LATTICE-MISMATCH-GENERATED DISLOCATION-STRUCTURES AND THEIR CONFINEMENT USING SUPERLATTICES IN HETEROEPITAXIAL GAAS/INP AND INP/GAAS GROWN BY CHEMICAL BEAM EPITAXY
被引:50
作者
:
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
CHU, SNG
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
TSANG, WT
CHIU, TH
论文数:
0
引用数:
0
h-index:
0
CHIU, TH
MACRANDER, AT
论文数:
0
引用数:
0
h-index:
0
MACRANDER, AT
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1989年
/ 66卷
/ 02期
关键词
:
D O I
:
10.1063/1.343568
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:520 / 530
页数:11
相关论文
共 26 条
[21]
A STUDY OF HETEROEPITAXY OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
[J].
PAK, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
PAK, K
;
WAKAHARA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
WAKAHARA, A
;
SATO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
SATO, T
;
YOSHIDA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
YOSHIDA, A
;
YONEZU, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
YONEZU, H
;
ITOH, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
ITOH, N
;
TAKAGI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
TAKAGI, Y
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(09)
:2358
-2361
[22]
PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES
[J].
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
RAZEGHI, M
;
RAMDANI, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
RAMDANI, J
;
VERRIELE, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
VERRIELE, H
;
DECOSTER, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
DECOSTER, D
;
CONSTANT, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
CONSTANT, M
;
VANBREMEERSCH, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
VANBREMEERSCH, J
.
APPLIED PHYSICS LETTERS,
1986,
49
(04)
:215
-217
[23]
RAZEGHI M, 1984, I PHYS C SER, V74, P679
[24]
LONG-WAVELENGTH PINFET RECEIVER OEIC ON A GAAS-ON-INP HETEROSTRUCTURE
[J].
SUZUKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
SUZUKI, A
;
ITOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
ITOH, T
;
TERAKADO, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
TERAKADO, T
;
KASAHARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
KASAHARA, K
;
ASANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
ASANO, K
;
INOMOTO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
INOMOTO, Y
;
ISHIHARA, H
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
ISHIHARA, H
;
TORIKAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
TORIKAI, T
;
FUJITA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
FUJITA, S
.
ELECTRONICS LETTERS,
1987,
23
(18)
:954
-955
[25]
VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS
[J].
TENG, SJJ
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
TENG, SJJ
;
BALLINGALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
BALLINGALL, JM
;
ROSENBAUM, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
ROSENBAUM, FJ
.
APPLIED PHYSICS LETTERS,
1986,
48
(18)
:1217
-1219
[26]
GROWTH OF HIGH-QUALITY GAXIN1-XASYP1-Y BY CHEMICAL BEAM EPITAXY
[J].
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
TSANG, WT
;
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
SCHUBERT, EF
;
CHIU, TH
论文数:
0
引用数:
0
h-index:
0
CHIU, TH
;
CUNNINGHAM, JE
论文数:
0
引用数:
0
h-index:
0
CUNNINGHAM, JE
;
BURKHARDT, EG
论文数:
0
引用数:
0
h-index:
0
BURKHARDT, EG
;
DITZENBERGER, JA
论文数:
0
引用数:
0
h-index:
0
DITZENBERGER, JA
;
AGYEKUM, E
论文数:
0
引用数:
0
h-index:
0
AGYEKUM, E
.
APPLIED PHYSICS LETTERS,
1987,
51
(10)
:761
-763
←
1
2
3
→
共 26 条
[21]
A STUDY OF HETEROEPITAXY OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
[J].
PAK, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
PAK, K
;
WAKAHARA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
WAKAHARA, A
;
SATO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
SATO, T
;
YOSHIDA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
YOSHIDA, A
;
YONEZU, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
YONEZU, H
;
ITOH, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
ITOH, N
;
TAKAGI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
TAKAGI, Y
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(09)
:2358
-2361
[22]
PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES
[J].
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
RAZEGHI, M
;
RAMDANI, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
RAMDANI, J
;
VERRIELE, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
VERRIELE, H
;
DECOSTER, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
DECOSTER, D
;
CONSTANT, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
CONSTANT, M
;
VANBREMEERSCH, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,UNITE 287,F-59655 VILLENEUVE DASCQ,FRANCE
VANBREMEERSCH, J
.
APPLIED PHYSICS LETTERS,
1986,
49
(04)
:215
-217
[23]
RAZEGHI M, 1984, I PHYS C SER, V74, P679
[24]
LONG-WAVELENGTH PINFET RECEIVER OEIC ON A GAAS-ON-INP HETEROSTRUCTURE
[J].
SUZUKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
SUZUKI, A
;
ITOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
ITOH, T
;
TERAKADO, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
TERAKADO, T
;
KASAHARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
KASAHARA, K
;
ASANO, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
ASANO, K
;
INOMOTO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
INOMOTO, Y
;
ISHIHARA, H
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
ISHIHARA, H
;
TORIKAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
TORIKAI, T
;
FUJITA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN
FUJITA, S
.
ELECTRONICS LETTERS,
1987,
23
(18)
:954
-955
[25]
VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS
[J].
TENG, SJJ
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
TENG, SJJ
;
BALLINGALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
BALLINGALL, JM
;
ROSENBAUM, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
ROSENBAUM, FJ
.
APPLIED PHYSICS LETTERS,
1986,
48
(18)
:1217
-1219
[26]
GROWTH OF HIGH-QUALITY GAXIN1-XASYP1-Y BY CHEMICAL BEAM EPITAXY
[J].
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
TSANG, WT
;
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
SCHUBERT, EF
;
CHIU, TH
论文数:
0
引用数:
0
h-index:
0
CHIU, TH
;
CUNNINGHAM, JE
论文数:
0
引用数:
0
h-index:
0
CUNNINGHAM, JE
;
BURKHARDT, EG
论文数:
0
引用数:
0
h-index:
0
BURKHARDT, EG
;
DITZENBERGER, JA
论文数:
0
引用数:
0
h-index:
0
DITZENBERGER, JA
;
AGYEKUM, E
论文数:
0
引用数:
0
h-index:
0
AGYEKUM, E
.
APPLIED PHYSICS LETTERS,
1987,
51
(10)
:761
-763
←
1
2
3
→