A STUDY OF HETEROEPITAXY OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

被引：9

作者：

PAK, K

WAKAHARA, A

SATO, T

YOSHIDA, A

YONEZU, H

ITOH, N

TAKAGI, Y

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN

[2] TOYOKO KAGAKU CO LTD,KAWASAKI,KANAGAWA 211,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 09期

关键词：

D O I：

10.1149/1.2096270

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2358 / 2361

页数：4

共 15 条

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[7] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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[8]

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[9] DOPING STUDIES OF GA0.5IN0.5P ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

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STRINGFELLOW, GB .

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[10]

ITO N, 1987, IN PRESS J APPL PHYS, V62

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