Excitation of intra-4f shell luminescence of Yb3+ by energy transfer from Si nanocrystals

被引：19

作者：

Fujii, M ^{[1
]}

Hayashi, S ^{[1
]}

Yamamoto, K ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 21期

关键词：

D O I：

10.1063/1.122688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiO2 films containing Si nanocrystals (nc-Si) and Yb were prepared and their photoluminescence (PL) properties were studied. For the sample containing nc-Si with an average diameter of 3.1 nm, a weak peak (similar to 1.26 eV) attributable to the intra-4f shell transition of Yb3+ could be observed at the low-energy side of a broad peak (similar to 1.4 eV) of nc-Si. The intensity of the 1.26 eV peak was found to depend strongly on the size of nc-Si and increase rapidly with decreasing size. The temperature dependence of the PL spectra was studied. It was found that the degree of temperature quenching of the 1.26 eV peak depends on the size of the nc-Si and becomes small as the size decreases. These results suggest that the band-gap widening of nc-Si due to the quantum size effects is essential to efficiently excite Yb3+ by nc-Si. (C) 1998 American Institute of Physics.

引用

页码：3108 / 3110

页数：3

共 17 条

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