Backside illuminated high saturation current partially depleted absorber photodetecters

被引：35

作者：

Li, X ^{[1
]}

Demiguel, S

Li, N

Campbell, JC

Tulchinsky, DL

Williams, KJ

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 20期

关键词：

D O I：

10.1049/el:20030927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-saturation-current, back side-illuminated In0.53Ga0.47As photodiode with a partially depleted absorber has been fabricated and tested. The I dB small-signal compression current was 199 mA at 1 GHz for a 100 pm diameter photodiode. The I dB large-signal compression current was 24 mA at 48 GHz for an 8 pm-diameter photodiode. The responsivity was 0.6 A/W at 1.55 mum.

引用

页码：1466 / 1467

页数：2