Large-signal compression-current measurements in high-power microwave pin photodiodes

被引：15

作者：

Williams, KJ ^{[1
]}

Esman, RD ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 01期

关键词：

D O I：

10.1049/el:19990057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present the first large-single compression measurements for surface-illuminated pin microwave photodetectors. The maximum RI; power delivered by the photodiodes was +12, +17 and +20dBm for bandwidths of 25, 3 and 1GHz, respectively.

引用

页码：82 / 84

页数：3

共 12 条

[1] A 920-1650-nm high-current photodetector [J].

Davis, GA ;

Weiss, RE ;

LaRue, RA ;

Williams, KJ ;

Esman, RD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) :1373-1375

[2] Traveling-wave photodetector design and measurements [J].

Giboney, KS ;

Rodwell, MJW ;

Bowers, JE .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :622-629

[3] Principles and performance of traveling-wave photodetector arrays [J].

Goldsmith, CL ;

Magel, GA ;

Baca, RJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (08) :1342-1350

[4] MEASUREMENT OF HOLE VELOCITY IN N-TYPE INGAAS [J].

HILL, P ;

SCHLAFER, J ;

POWAZINIK, W ;

URBAN, M ;

EICHEN, E ;

OLSHANSKY, R .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1260-1262

[5] Diluted- and distributed-absorption microwave waveguide photodiodes for high efficiency and high power [J].

Jasmin, S ;

Vodjdani, N ;

Renaud, JC ;

Enard, A .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (08) :1337-1341

[6] High-power high-speed photodetectors - Design, analysis, and experimental demonstration [J].

Lin, LY ;

Wu, MC ;

Itoh, T ;

Vang, TA ;

Muller, RE ;

Sivco, DL ;

Cho, AY .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (08) :1320-1331

[7] High-power microwave photodiode for improving performance of rf fiber optic links [J].

Paslaski, JS ;

Chen, PC ;

Chen, JS ;

Gee, CM ;

BarChaim, N .

PHOTONICS AND RADIO FREQUENCY, 1996, 2844 :110-119

[8] InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz [J].

Shimizu, N ;

Watanabe, N ;

Furuta, T ;

Ishibashi, T .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (03) :412-414

[9] HIGH-FREQUENCY SATURATION MEASUREMENTS OF AN INGAAS/INP WAVE-GUIDE PHOTODETECTOR [J].

WILLIAMS, AR ;

KELLNER, AL ;

YU, PKL .

ELECTRONICS LETTERS, 1993, 29 (14) :1298-1299

[10] EFFECTS OF HIGH SPACE-CHARGE FIELDS ON THE RESPONSE OF MICROWAVE PHOTODETECTORS [J].

WILLIAMS, KJ ;

ESMAN, RD ;

DAGENAIS, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (05) :639-641

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