HIGH-FREQUENCY SATURATION MEASUREMENTS OF AN INGAAS/INP WAVE-GUIDE PHOTODETECTOR

被引：32

作者：

WILLIAMS, AR

KELLNER, AL

YU, PKL

机构：

[1] Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, 0407, San Diego

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 14期

关键词：

PHOTODETECTORS; OPTICAL WAVE-GUIDES; INTEGRATED OPTOELECTRONICS;

D O I：

10.1049/el:19930866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high frequency saturation characteristics of an InGaAs/InP waveguide pin photodetector are measured. At a wave-length of 1.3 mum, the detector has a responsivity of 0.5 A/W and a flat frequency response from 800 MHz to 20 GHz. With a bias of -4V, the normalised frequency response of the detector remains unchanged when optical powers up to 10 mW are incident on the detector.

引用

页码：1298 / 1299

页数：2

共 6 条

[1]

BETTS GE, 1991, P SOC PHOTO-OPT INS, V1562, P281, DOI 10.1117/12.50786

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[4] INGAAS INP WAVE-GUIDE PHOTODETECTOR WITH HIGH SATURATION INTENSITY [J].

WILLIAMS, AR ;

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[5] OBSERVATION OF PHOTODETECTOR NONLINEARITIES [J].

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ESMAN, RD .

ELECTRONICS LETTERS, 1992, 28 (08) :731-732

[6]

WILLIAMS KJ, 1993, OFC IOOC 93, P120

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