INGAAS INP WAVE-GUIDE PHOTODETECTOR WITH HIGH SATURATION INTENSITY

被引：26

作者：

WILLIAMS, AR

KELLNER, AL

JIANG, XS

YU, PKL

机构：

[1] Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 24期

关键词：

PHOTODETECTORS; INTEGRATED OPTICS; OPTOELECTRONICS;

D O I：

10.1049/el:19921452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs/InP rib-loaded waveguide pin photodetector integrated with a microwave coplanar waveguide transmission line on a semi-insulating InP substrate is demonstrated, The detector has a 3 dB frequency response in excess of 20 GHz. The DC responsivity of the waveguide photodetector remains constant at 0.21 A/W over a range of incident optical powers from 400 muW to 20 mW.

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页码：2258 / 2259

页数：2

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