Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study

被引：77

作者：

Klimov, VI

Schwarz, CJ

McBranch, DW

White, CW

机构：

[1] Univ Calif Los Alamos Natl Lab, Chem Sci & Technol Div, Los Alamos, NM 87544 USA

[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 18期

关键词：

D O I：

10.1063/1.122519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient absorption spectra of ion-implanted Si nanocrystals (NCs) exhibit two picosecond photoinduced absorption features, attributed to carriers in NC quantized states (high-energy band) and Si/SiO2 interface states (low-energy band). Fast relaxation of the high-energy band indicates that populations of quantized states are short lived and decay on the sub-10-ps time scale due to efficient surface trapping. This shows that the red emission in our samples is not due to carriers in quantized states but rather is a result of deactivation of surface traps. (C) 1998 American Institute of Physics. [S0003-6951(98)00544-0].

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页码：2603 / 2605

页数：3

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