The chemical vapor deposition of nickel phosphide or selenide thin films from a single precursor

被引：205

作者：

Panneerselvam, Arunkumar ^{[1
,2
]}

Malik, Mohammad. A. ^{[1
,2
]}

Afzaal, Mohammad ^{[1
,2
]}

O'Brien, Paul ^{[1
,2
]}

Helliwellt, Madeleine ^{[1
]}

机构：

[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 08期

关键词：

D O I：

10.1021/ja078202j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nickel phosphide, nickel selenide thin films and their heterostructure (Ni0.85Se/Ni2P) were deposited from a newly synthesized single source precursor {Ni[(Pr2P)-Pr-i(S)NP(Se)Pr-i(2)](2)} just by altering the deposition temperature using CVD.

引用

页码：2420 / 2421

页数：2

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