Metalorganic molecular beam epitaxy of GaNAs alloys on (001)GaAs

被引：30

作者：

Uesugi, K ^{[1
]}

Suemune, I ^{[1
]}

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaNAs; GaAs substrate; MOMBE; monomethylhydrazine; X-ray diffraction; AFM;

D O I：

10.1016/S0022-0248(98)00337-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaNAs alloys grown on GaAs(0 0 1) substrates by metalorganic molecular beam epitaxy were investigated using X-ray diffraction and atomic force microscopy. The N composition in GaNAs alloys increases with decreasing growth temperature and with increasing the pressure of the monomethylhydrazine precursor as the N source. An atomically flat GaNAs surface was observed for the dilute N compositions, while three-dimensional islands were observed for the higher N composition. Special features observed in the intermediate N composition are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：490 / 495

页数：6

共 6 条

[1] Bowing parameter of the band-gap energy of GaNxAs1-x
Bi, WG
Tu, CW
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (12) : 1608 - 1610
[2] THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES
FOXON, CT
CHENG, TS
NOVIKOV, SV
LACKLISON, DE
JENKINS, LC
JOHNSTON, D
ORTON, JW
HOOPER, SE
BABAALI, N
TANSLEY, TL
TRETYAKOV, VV
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 892 - 896
[3] MASS-SPECTROMETRIC STUDY AND MODELING OF DECOMPOSITION PROCESS OF TRIS-DIMETHYLAMINO-ARSENIC ON (001) GAAS SURFACE
HAMAOKA, K
SUEMUNE, I
FUJII, K
KOUI, T
KISHIMOTO, A
YAMANISHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9A): : L1579 - L1582
[4] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE
KONDOW, M
UOMI, K
HOSOMI, K
MOZUME, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1056 - L1058
[5] Nitrogen atomic-layer-doping on Ga-terminated and misoriented GaAs surfaces by metalorganic vapor phase epitaxy using dimethylhydrazine
Saito, H
Makimoto, T
Kobayashi, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (12B): : L1644 - L1647
[6] RED SHIFT OF PHOTOLUMINESCENCE AND ABSORPTION IN DILUTE GAASN ALLOY LAYERS
WEYERS, M
SATO, M
ANDO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A): : L853 - L855

← 1 →