共 12 条
- [2] EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09): : L746 - L748
- [4] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1273 - 1275
- [7] Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1299 - 1301
- [9] MAKIMOTO T, 1996, IN PRESS JPN J APPL, P559
- [10] SAITO H, 1996, IN PRESS J CRYST GRO