Nitrogen atomic-layer-doping on Ga-terminated and misoriented GaAs surfaces by metalorganic vapor phase epitaxy using dimethylhydrazine

被引:21
作者
Saito, H
Makimoto, T
Kobayashi, N
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 12B期
关键词
atomic-layer-doping; delta-doping; MOVPE; dimethylhydrazine; GaAs; non-(100); step density; N doping; Ga-terminated surface;
D O I
10.1143/JJAP.35.L1644
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nitrogen atomic-layer-doping on Ga-terminated and misoriented GaAs surfaces was performed by metalorganic Vapor Phase Epitaxy (MOVPE) using dimethylhydrazine to investigate the role of the surface for nitrogen atom incorporation. Compared with the As-terminated surface, dimethylhydrazine molecules are preferentially decomposed on the Ga-terminated surface due to the catalytic effect, resulting in a higher doping efficiency. We also investigated the crystal orientation dependence of the nitrogen doping concentration. Nitrogen atoms are preferentially incorporated on the (n11)A surfaces (n greater than or equal to 3) than the (100) surface. For the (n11)A surface, the nitrogen doping efficiency increases with decreasing n value. This indicated the doping efficiency increases with the step density. In contrast, nitrogen atoms are incorporated less on the (n11)B surfaces (n greater than or equal to 3) than the (100) surface and their doping efficiency decreases with increasing step density. These results are ascribed to the difference of atomic bonding geometries for adsorption sites between (n11)A and (n11)B surfaces. The doping efficiency for A-type steps is twice as high as that for the (100) terraces while that for B-type steps is negligibly small.
引用
收藏
页码:L1644 / L1647
页数:4
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